Top 7 China Wide Bandgap Semiconductor Companies 2025
China's wide bandgap semiconductor market reached RMB 80 billion in 2025, driven by explosive demand for SiC (silicon carbide) and GaN (gallium nitride) power devices in EVs, renewable energy, and 5G applications. China now produces 40%+ of global SiC wafers and has established complete SiC and GaN supply chains from substrate growth through device fabrication. Government subsidies and NEV mandates have accelerated SiC adoption in Chinese electric vehicles.
TL;DR: China's wide bandgap semiconductor market reaches RMB 80B with 40%+ global SiC wafer production. San'an Optoelectronics leads SiC substrate production with 6-inch commercial wafers while Inncol leads GaN power devices with 650V products for EV chargers.
Top Companies
San'an Optoelectronics (三安光电)
SiC substrate leaderSan'an Optoelectronics is China's largest wide bandgap semiconductor company, producing SiC substrates, GaN epitaxy, and power devices. Its Hunan facility produces 6-inch SiC substrates commercially and is developing 8-inch capability. San'an also produces GaN-on-SiC RF devices for 5G base stations.
Inncol (英诺赛科)
GaN power device leaderInncol (Innoscience) is the world's largest GaN-on-Si power device manufacturer, operating 8-inch GaN fabrication in Suzhou. Its 650V GaN HEMTs are used in EV chargers, data center power supplies, and consumer fast chargers, with 100M+ GaN devices shipped cumulatively.
TanKeBlue (天科合达)
SiC substrate pioneerTanKeBlue is China's pioneering SiC substrate manufacturer, affiliated with the Chinese Academy of Sciences. It produces conductive and semi-insulating 4-inch and 6-inch SiC substrates, supplying Chinese SiC device makers including BYD Semiconductor and CR Microelectronics.
SICC (山东天岳)
Semi-insulating SiC substrateSICC (Shandong Tianyue) specializes in semi-insulating SiC substrates for RF and power applications. Its 6-inch semi-insulating substrates supply San'an and other GaN-on-SiC device makers, with production capacity exceeding 100,000 wafers annually.
BYD Semiconductor (比亚迪半导体)
SiC EV modulesBYD Semiconductor integrates SiC MOSFETs into power modules for BYD electric vehicles. The company's self-developed SiC MOSFET modules are used in BYD's premium EV models including the Han and Yangwang series, achieving 5%+ range improvement over silicon IGBT modules. BYD plans to use SiC modules in 100% of new EV models by 2027.
CR Microelectronics (时代电气)
SiC MOSFET modulesCR Microelectronics (a CRRC subsidiary) produces SiC MOSFET power modules for rail transit, industrial drives, and EV applications. Its 1200V SiC MOSFET modules are used in high-speed rail traction systems and are being qualified for EV main inverter applications.
Episil (华润微电子)
SiC device fabricationEpisil (China Resources Microelectronics) operates SiC and GaN device fabrication facilities, producing SiC Schottky diodes and MOSFETs for power electronics applications. The company provides foundry services for SiC device design companies and is expanding 6-inch SiC wafer production capacity.
Comparison Table
| Company | Material | Product | Technology | Key Application |
|---|---|---|---|---|
| San'an Optoelectronics | SiC+GaN | Substrate+device | 6-inch SiC, 8-inch GaN | EV, 5G RF |
| Inncol | GaN-on-Si | GaN HEMT | 8-inch GaN | Charger, PSU |
| TanKeBlue | SiC | Substrate | 4/6-inch conductive | Power devices |
| SICC | SiC | Semi-insulating | 6-inch | RF, power |
| BYD Semi | SiC | Power modules | SiC MOSFET | EV traction |
| CR Micro | SiC | Power modules | 1200V MOSFET | Rail, EV |
| Episil | SiC+GaN | Foundry | 6-inch | Power electronics |
Frequently Asked Questions
How much SiC does China produce?
China produces over 500,000 SiC substrates annually (6-inch equivalent), accounting for 40%+ of global SiC wafer production. Major expansion projects by San'an, TanKeBlue, and SICC are adding 1 million+ additional wafer capacity by 2027. China's SiC device production is growing rapidly but still trails global leaders (Wolfspeed, Infineon, STMicroelectronics) in advanced MOSFET yield and reliability.
Why is SiC important for Chinese EVs?
SiC MOSFETs offer 30-50% lower switching losses compared to silicon IGBTs, enabling 5-8% longer EV range, faster charging, and smaller power electronics. Chinese EV makers (BYD, NIO, XPeng) are rapidly adopting SiC inverters. BYD plans 100% SiC adoption by 2027. China's massive EV production (10M+ vehicles/year) creates enormous SiC demand, driving domestic industry growth.
What is China's GaN market status?
China's GaN power device market is led by Inncol (Innoscience), the world's largest GaN-on-Si manufacturer. Inncol shipped 100M+ GaN devices cumulatively, primarily for fast chargers and data center PSUs. China is also strong in GaN-on-SiC RF devices for 5G base stations (San'an leading). However, China lags in GaN-on-GaN power devices for high-voltage applications, where Japanese and US companies lead.